Using refined kano model and decision trees to discover learners’ needs for teaching videos

Multimedia Tools and Applications - With the advancement of technology and the spread of the COVID19 epidemic, learning can no longer only be done through face-to-face teaching. Numerous digital...     

温度对变压器绝缘缺陷影响规律的分析及验证

本文中作者研究了温度对油浸式变压器绝缘纸老化水平的影响,开展了频域介电谱测试得出不同的试验温度下绝缘纸的电导率频域谱.推导了温度、电导率和相对介电常数之间的作用情况,并进行实例验证.     

柔性纤维结构超级电容器研究进展

为了提高电源器件与人体高曲率表面的适配性，电源器件突破平板结构的限制，衍生出了柔性纤维结构。柔性纤维超级电容器具有高功率密度、超长循环寿命和柔性舒适等特点有望成为最具前景的柔性可穿戴电源之一。因此，本文主要介绍了碳材料、过渡金属氧化物以及复合材料三种功能材料对柔性纤维超级电容器结构和性能的影响。每种材料凭借自身独特的性质在柔性纤维超级电容器器件中发挥着重要作用，并助力可穿戴电源器件的发展。     

Modulation of electrical transport in calcium cobaltite ceramics and thick films through microstructure control and doping

Ca₃Co₄O₉ is a promising p-type thermoelectric oxide material having intrinsically low thermal conductivity. With low cost and opportunities for automatic large scale production, thick film technologies offer considerable potential for a new generation of micro-sized thermoelectric coolers or generators. Here, based on the chemical composition optimized by traditional solid state reaction for bulk samples, we present a viable approach to modulating the electrical transport properties of screen-printed calcium cobaltite thick films through control of the microstructural evolution by optimized heat-treatment. XRD and TEM analysis confirmed the formation of high-quality calcium cobaltite grains. By creating 2.0 at% cobalt deficiency in Ca_2.7Bi_0.3Co₄O_9+δ, the pressureless sintered ceramics reached the highest power factor of 98.0 μWm^?1 K^-2 at 823 K, through enhancement of electrical conductivity by reduction of poorly conducting secondary phases. Subsequently, textured thick films of Ca_2.7Bi_0.3Co_3.92O_9+δ were efficiently tailored by controlling the sintering temperature and holding time. Optimized Ca_2.7Bi_0.3Co_3.92O_9+δ thick films sintered at 1203 K for 8 h exhibited the maximum power factor of 55.5 μWm^?1 K^-2 at 673 K through microstructure control.     

5G核心网业务模型的智能化预测研究

摘 要：核心网业务模型的建立是5G网络容量规划和网络建设的基础，通过现有方法得到的理论业务模型是静态不可变的且与实际网络存在偏离。为了克服现有5G核心网业务模型与现网模型适配性较差以及规划设备无法满足用户实际业务需求的问题，提出了一种长短期记忆（long short-term memory，LSTM）网络与卷积LSTM （convolution LSTM，ConvLSTM）网络双通道融合的 5G 核心网业务模型预测方法。该方法基于人工智能（artificial intelligence，AI）技术以实现高质量的核心网业务模型的智能预测，形成数据反馈闭环，实现网络自优化调整，助力网络智能化建设。     

IRS辅助的SWIPT系统中基于能效优先的波束成形设计与优化

以智能反射面(intelligent reflecting surface,IRS)辅助的无线携能通信(simultaneous wireless information and power transfer,SWIPT)系统为背景,研究了该系统中基于能效优先的多天线发送端有源波束成形与IRS无源波束成形联合设计与优化方法。以最大化接收端的最小能效为优化目标,构造在发送端功率、接收端能量阈值、IRS相移等多约束下的非线性优化问题,用交替方向乘子法(alternating direction method of multipliers,ADMM)求解。采用Dinkelbach算法转化目标函数,通过奇异值分解(singular value decomposition,SVD)和半定松弛(semi-definite relaxation,SDR)得到发送端有源波束成形向量。采用SDR得到IRS相移矩阵与反射波束成形向量。结果表明,该系统显著降低了系统能量收集(energy harvesting,EH)接收端的能量阈值。当系统总电路功耗为?15 dBm时,所提方案的用户能效为300 KB/J。当IRS反射阵源数与发送天线数均为最大值时,系统可达最大能效。     

广义正交码索引调制系统的性能分析

摘 要：为了提高码索引调制（code index modulation，CIM）系统的传输效率，提出了一种具有更低复杂度的单输入单输出（single input single output，SISO）的广义正交码索引调制（generalized orthogonal code index modulation，GQCIM）系统。CIM 系统使用扩频码和星座符号传输信息，但只能激活两个扩频码索引和一个调制符号。而 GQCIM 系统以一种新颖的方式克服了只激活一个调制符号的限制，同时充分利用了调制符号的正交性，增加扩频码索引以传输更多的额外信息位，提高了系统的传输效率。此外，分析了GQCIM系统的理论性能，推导了误码率性能的上界。通过蒙特卡罗仿真验证了GQCIM系统的性能，对比发现GQCIM系统的理论和仿真性能一致。而且在相同的传输效率下，结果显示GQCIM系统的性能优于同样具有正交性的调制系统，如广义码索引调制（generalized code index modulation，GCIM）系统、CIM系统、码索引调制-正交空间调制（code index modulation aided quadrature spatial modulation，CIM-QSM）系统、码索引调制-正交空间调制（code index modulation aided spatial modulation，CIM-SM）系统、脉冲索引调制（pulse index modulation，PIM）系统。     

Low Temperature Characteristics of the Metal–Superconductor NIS Tunneling Thermometer

We discuss the temperature dependence of a common low temperature local thermometer, a tunnel junction between a superconductor and a normal metal (NIS junction). Towards the lowest temperatures its characteristics tend to saturate, which is usually attributed to selfheating effects. In this technical note, we reanalyze this saturation and show that the temperature independent subgap current of the junction alone explains in some cases the low temperature behavior quantitatively.